Impact of device scaling on the electrical properties of MoS₂ field-effect transistors.

ABSTRACT: Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS₂ material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS₂ transistors, because edge injection is dominant.

SUBMITTER: Arutchelvan G 

PROVIDER: S-EPMC7987965 | biostudies-literature | 2021 Mar

REPOSITORIES: biostudies-literature