Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing.

ABSTRACT: The negatively charged silicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can augment the optical emission of the [Formula: see text], yet fine-tuning the defect-cavity interaction remains challenging. We report on two postfabrication processes that result in enhancement of the [Formula: see text] optical emission from our PCCs, an indication of improved coupling between the cavity and ensemble of silicon vacancies. Below-bandgap irradiation at 785-nm and 532-nm wavelengths carried out at times ranging from a few minutes to several hours results in stable enhancement of emission, believed to result from changing the relati

SUBMITTER: Gadalla MN 

PROVIDER: S-EPMC8000350 | biostudies-literature | 2021 Mar

REPOSITORIES: biostudies-literature