Reaction Mechanisms during Atomic Layer Deposition of AlF₃ Using Al(CH₃)₃ and SF₆ Plasma.

ABSTRACT: Metal fluorides generally demonstrate a wide band gap and a low refractive index, and they are commonly employed in optics and optoelectronics. Recently, an SF₆ plasma was introduced as a novel co-reactant for the atomic layer deposition (ALD) of metal fluorides. In this work, the reaction mechanisms underlying the ALD of fluorides using a fluorine-containing plasma are investigated, considering aluminum fluoride (AlF₃) ALD from Al(CH₃)₃ and an SF₆ plasma as a model system. Surface infrared spectroscopy studies indicated that Al(CH₃)₃ reacts with the surface in a ligand-exchange reaction by accepting F from the AlF₃ film and forming CH₃ surface groups. It was found that at low deposition temp

SUBMITTER: Vos MFJ 

PROVIDER: S-EPMC8016095 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature