Direct Growth of Highly Conductive Large-Area Stretchable Graphene.

ABSTRACT: The direct synthesis of inherently defect-free, large-area graphene on flexible substrates is a key technology for soft electronic devices. In the present work, in situ plasma-assisted thermal chemical vapor deposition is implemented in order to synthesize 4 in. diameter high-quality graphene directly on 10 nm thick Ti-buffered substrates at 100 °C. The in situ synthesized monolayer graphene displays outstanding stretching properties coupled with low sheet resistance. Further improved mechanical and electronic performances are achieved by the in situ multi-stacking of graphene. The four-layered graphene multi-stack is shown to display an ultralow resistance of ≈6 Ω sq^-1, which is consistently maintained during the harsh repeat stretching tests and is assisted by self-p-do

SUBMITTER: Han Y 

PROVIDER: S-EPMC8025006 | biostudies-literature | 2021 Apr

REPOSITORIES: biostudies-literature