Time-of-flight secondary ion mass spectrometry fragment regularity in gallium-doped zinc oxide thin films.

ABSTRACT: Time-of-flight secondary ion mass spectrometry fragment analysis remains a challenging task. The fragment appearance regularity (FAR) rule is particularly useful for two-element compounds such as ZnO. Ion fragments appearing in the form of Zn_xO_y obey the rule [Formula: see text] in the positive secondary ion spectrum and [Formula: see text] in the negative spectrum where the valence of Zn is + 2 and that of O is - 2. Fragment analysis in gallium-doped ZnO (GZO) films can give insights into the bonding of the elements in this important semiconductor. Fragment analysis of 1 and 7 wt% GZO films shows that only the negative ion fragments obey the FAR rule where ZnO^‒, ⁶⁶ZnO^‒, ⁶⁸ZnO^‒ and ZnO₂^‒ ion

SUBMITTER: Saw KG 

PROVIDER: S-EPMC8027856 | biostudies-literature | 2021 Apr

REPOSITORIES: biostudies-literature