Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation.
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ABSTRACT: Although solution-processed Cu(In,Ga)(S,Se)2 (CIGS) absorber layers can potentially enable the low-cost and large-area production of highly stable electronic devices, they have rarely been applied in photodetector applications. In this work, we present a near-infrared photodetector functioning at 980 nm based on solution-processed CIGS with a potassium-induced bandgap grading structure and chalcopyrite grain growth. The incorporation of potassium in the CIGS film promotes Se uptake in the bulk of the film during the chalcogenization process, resulting in a bandgap grading structure with a wide space charge region that allows improved light absorption in the near-infrared region and charge carrier separation. Also, increasing the Se penetration in the potassium-incorporated CIGS
SUBMITTER: Kim JH
PROVIDER: S-EPMC8035197 | biostudies-literature | 2021 Apr
REPOSITORIES: biostudies-literature
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