A non-volatile cryogenic random-access memory based on the quantum anomalous Hall effect.

ABSTRACT: The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipation-less and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists. Here we construct an ultra-low power, non-volatile, cryogenic memory architecture leveraging the QAHE phenomenon. Our design promises orders of magnitude lower cell area compared with the state-of-the-art cryogenic memory technologies. We harness the fundamentally quantized Hall resistance levels in moi

SUBMITTER: Alam S 

PROVIDER: S-EPMC8042021 | biostudies-literature | 2021 Apr

REPOSITORIES: biostudies-literature