High-Performance CVD Bilayer MoS2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics.

ABSTRACT: Two-dimensional (2D) MoS2 have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS2 exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable for use in future flexible high-frequency electronics. However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS2 radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS2 RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. The extrinsic cutoff frequency (fT) and maximum oscillation frequency (fmax) increased with reducing gate lengths. From trans

SUBMITTER: Gao Q 

PROVIDER: S-EPMC8072592 | biostudies-literature | 2021 Apr

REPOSITORIES: biostudies-literature