Fabrication of GaN nano-towers based self-powered UV photodetector.

ABSTRACT: The fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high I_Light/I_Dark ratio (> 10⁴), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The

SUBMITTER: Goswami L 

PROVIDER: S-EPMC8149650 | biostudies-literature | 2021 May

REPOSITORIES: biostudies-literature