Stretching the Equilibrium Limit of Sn in Ge_1-x Sn _x Nanowires: Implications for Field Effect Transistors.

ABSTRACT: Ge_1-x Sn _x nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition to a direct bandgap for application in optoelectronic devices and to increase the efficiency of the GeSn-based photonic devices. Here we report the catalytic bottom-up fabrication of Ge_1-x Sn _x nanowires with very high Sn incorporation (x > 0.3). These nanowires are grown in supercritical toluene under high pressure (21 MPa). The introduction of high pressure in the vapor-liquid-solid (VLS) like growth regime resulted in a substantial increase of Sn incorporation in the nanowires, with a Sn content ranging between 10 and 35 atom %. The incorporation of Sn in the nano

SUBMITTER: Biswas S 

PROVIDER: S-EPMC8153542 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature