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Isoelectronic perturbations to f-d-electron hybridization and the enhancement of hidden order in URu2Si2.


ABSTRACT: Electrical resistivity measurements were performed on single crystals of URu2-x Os x Si2 up to x = 0.28 under hydrostatic pressure up to P = 2 GPa. As the Os concentration, x, is increased, 1) the lattice expands, creating an effective negative chemical pressure Pch(x); 2) the hidden-order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase; and 3) less external pressure Pc is required to induce the HO→LMAFM phase transition. We compare the behavior of the T(x, P) phase boundary reported here for the URu2-x Os x Si2 system with previous reports of enhanced HO in URu2Si2 upon tuning with P or similarly in URu2-x Fe x Si2 upon tuning with positive Pch(x). It is noteworthy that pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the first-order transition to the LMAFM phase in URu2Si2 We present a scenario in which the application of pressure or the isoelectronic substitution of Fe and Os ions for Ru results in an increase in the hybridization of the U-5f-electron and transition metal d-electron states which leads to electronic instability in the paramagnetic phase and the concurrent formation of HO (and LMAFM) in URu2Si2 Calculations in the tight-binding approximation are included to determine the strength of hybridization between the U-5f-electron states and the d-electron states of Ru and its isoelectronic Fe and Os substituents in URu2Si2.

SUBMITTER: Wolowiec CT 

PROVIDER: S-EPMC8157968 | biostudies-literature | 2021 May

REPOSITORIES: biostudies-literature

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Isoelectronic perturbations to <i>f</i>-<i>d</i>-electron hybridization and the enhancement of hidden order in URu<sub>2</sub>Si<sub>2</sub>.

Wolowiec Christian T CT   Kanchanavatee Noravee N   Huang Kevin K   Ran Sheng S   Breindel Alexander J AJ   Pouse Naveen N   Sasmal Kalyan K   Baumbach Ryan E RE   Chappell Greta G   Riseborough Peter S PS   Maple M Brian MB  

Proceedings of the National Academy of Sciences of the United States of America 20210501 20


Electrical resistivity measurements were performed on single crystals of URu<sub>2-<i>x</i></sub> Os <sub><i>x</i></sub> Si<sub>2</sub> up to <i>x</i> = 0.28 under hydrostatic pressure up to <i>P</i> = 2 GPa. As the Os concentration, <i>x</i>, is increased, 1) the lattice expands, creating an effective negative chemical pressure <i>P</i><sub>ch</sub>(<i>x</i>); 2) the hidden-order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase; and 3) less e  ...[more]

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