Revealing the relationship between photoelectrochemical performance and interface hole trapping in CuBi₂O₄ heterojunction photoelectrodes.

ABSTRACT: p-Type CuBi₂O₄ is considered a promising metal oxide semiconductor for large-scale, economic solar water splitting due to the optimal band structure and low-cost fabrication. The main challenge in utilizing CuBi₂O₄ as a photoelectrode for water splitting, is that it must be protected from photo-corrosion in aqueous solutions, an inherent problem for Cu-based metal oxide photoelectrodes. In this work, several buffer layers (CdS, BiVO₄, and Ga₂O₃) were tested between CuBi₂O₄ and conformal TiO₂ as the protection layer. RuO _x was used as the co-catalyst for hydrogen evolution. Factors that limit the photoelectrochemical performance of the CuBi₂O₄

SUBMITTER: Song A 

PROVIDER: S-EPMC8162275 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature