Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS₂ /MoTe₂ Heterostructures.

ABSTRACT: Manipulation of Ohmic contacts in 2D transition metal dichalcogenides for enhancing the transport properties and enabling its application as a practical device has been a long-sought goal. In this study, n-type tungsten disulfide (WS₂ ) single atomic layer to improve the Ohmic contacts of the p-type molybdenum ditelluride (MoTe₂ ) material is covered. The Ohmic properties, based on the lowering of Schottky barrier height (SBH) owing to the tunneling barrier effect of the WS₂ monolayer, are found to be unexpectedly excellent at room temperature and even at 100 K. The improved SBH and contact resistances are 3 meV and 1 MΩ µm, respectively. The reduction in SBH and contact resistance is confirmed with temperature-dependent transport measurements. This study f

SUBMITTER: Kim J 

PROVIDER: S-EPMC8188188 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature