Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.

ABSTRACT: Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propaga

SUBMITTER: Chuan MW 

PROVIDER: S-EPMC8202956 | biostudies-literature | 2021

REPOSITORIES: biostudies-literature