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Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements.


ABSTRACT: There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn3/Pt devices. A six-terminal double-cross device is constructed, with an IrMn3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

SUBMITTER: Arpaci S 

PROVIDER: S-EPMC8219769 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature

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Observation of current-induced switching in non-collinear antiferromagnetic IrMn<sub>3</sub> by differential voltage measurements.

Arpaci Sevdenur S   Lopez-Dominguez Victor V   Shi Jiacheng J   Sánchez-Tejerina Luis L   Garesci Francesca F   Wang Chulin C   Yan Xueting X   Sangwan Vinod K VK   Grayson Matthew A MA   Hersam Mark C MC   Finocchio Giovanni G   Khalili Amiri Pedram P  

Nature communications 20210622 1


There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguousl  ...[more]

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