Influence of plasma treatment on SiO₂/Si and Si₃N₄/Si substrates for large-scale transfer of graphene.

ABSTRACT: One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO₂/Si and Si₃N₄/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolat

SUBMITTER: Lukose R 

PROVIDER: S-EPMC8222355 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature