Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor with MoS₂ Channel and Its Application to Infrared Detectable Phototransistors.

ABSTRACT: For next-generation electronics and optoelectronics, 2D-layered nanomaterial-based field effect transistors (FETs) have garnered attention as promising candidates owing to their remarkable properties. However, their subthreshold swings (SS) cannot be lower than 60 mV/decade owing to the limitation of the thermionic carrier injection mechanism, and it remains a major challenge in 2D-layered nanomaterial-based transistors. Here, a gate-connected MoS₂ atomic threshold switching FET using a nitrogen-doped HfO₂-based threshold switching (TS) device is developed. The proposed device achieves an extremely low SS of 11 mV/decade and a high on-off ratio of ≈10⁶ by maintaining a high on-state drive current due to the steep switching of the TS device at

SUBMITTER: Kim SG 

PROVIDER: S-EPMC8224431 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature