Ferroelectric-tuned van der Waals heterojunction with band alignment evolution.

ABSTRACT: Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial and feasible to realize high performance and multifunctionality. Here, we design a ferroelectric-tuned van der Waals heterojunction device structure by integrating a GeSe/MoS₂ VHJ and poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the GeSe/MoS₂ heterojunction. Band alignment transition of the heterojunction from type II to type I is demonstrated. The combination of anisotropic GeSe with MoS₂ realizes a high-

SUBMITTER: Chen Y 

PROVIDER: S-EPMC8242043 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature