Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb₂Te₃.

ABSTRACT: One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high-density data integration. In this work, by first-principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb₂Te₃, is proposed. Importantly, its SET (crystallization) process is a fast one-step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO₂ (001) surfaces or hexagonal Boron Nitride,

SUBMITTER: Wang XP 

PROVIDER: S-EPMC8261487 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature