Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors.

ABSTRACT: In this study, photonic curing is used to rapidly and effectively convert metal-oxide sol-gels to realize high-quality thin-film transistors (TFTs). Photonic curing offers advantages over conventional thermal processing methods such as ultrashort processing time and compatibility with low-temperature substrates. However, previous work on photonically cured TFTs often results in significant heating of the entire substrate rather than just the thin film at the surface. Here, sol-gel indium zinc oxide (IZO)-based TFTs are photonically cured with efficient gate absorbers requiring as few as five pulses using intense white light delivering radiant energy up to 6 J cm^-2. Simulations indicate that the IZO film reaches a peak temperature of ∼590 °C while the back of the substrate stays

SUBMITTER: Weidling AM 

PROVIDER: S-EPMC8280640 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature