Bandgap control in two-dimensional semiconductors via coherent doping of plasmonic hot electrons.

ABSTRACT: Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate a widely tunable bandgap (renormalisation up to 550 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently doping the lattice with plasmonic hot electrons. In particular, we integrate tungsten-disulfide (WS₂) monolayers into a self-assembled plasmonic crystal, which enables coherent coupling between semiconductor excitons and plasmon resonances. Accompanying this process, the plasmon-induced hot electrons can repeatedly fill the WS₂ conduction band, leading to population inversion and a significant reconstruction in band structures and exc

SUBMITTER: Chen YH 

PROVIDER: S-EPMC8282635 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature