Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films.

ABSTRACT: Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO₃ films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become ra

SUBMITTER: Xiao S 

PROVIDER: S-EPMC8288939 | biostudies-literature | 2020 Feb

REPOSITORIES: biostudies-literature