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High-Chern-number and high-temperature quantum Hall effect without Landau levels.


ABSTRACT: The quantum Hall effect (QHE) with quantized Hall resistance of h/νe 2 started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C| = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C > 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.

SUBMITTER: Ge J 

PROVIDER: S-EPMC8289033 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature

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High-Chern-number and high-temperature quantum Hall effect without Landau levels.

Ge Jun J   Liu Yanzhao Y   Li Jiaheng J   Li Hao H   Luo Tianchuang T   Wu Yang Y   Xu Yong Y   Wang Jian J  

National science review 20200430 8


The quantum Hall effect (QHE) with quantized Hall resistance of <i>h</i>/<i>νe</i> <sup>2</sup> started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |<i>C</i>| = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realiz  ...[more]

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