Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO₂ Layer.

ABSTRACT: Narrow-band-gap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer more severe corrosion by the electrolyte solution than the thin-film counterparts. Thus, short-term durability is the major obstacle for using these NWs for practical water-splitting applications. Here, we demonstrated for the first time that a thin layer (∼7 nm thick) of compact TiO₂ deposited by atomic layer deposition can provide robust protection to III-V NWs. The protected GaAs NWs maintain 91.4% of its photoluminescence intensity after 14 months of storage in ambient atmosphere, which suggests the TiO₂ layer is pinhole-free.

SUBMITTER: Cui F 

PROVIDER: S-EPMC8289235 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature