Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters.

ABSTRACT: The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm thick polycrystalline ZnO films obtained by atomic layer deposition (ALD) at a growth temperature (Tg) of 100-300 °C were investigated. The electrical properties of the films showed a dependence on the substrate (a-Al2O3 or Si (100)) and a high sensitivity to Tg, related to the deviation of the film stoichiometry as demonstrated by the RT-Hall effect. The average crystallite size increased from 20-30 nm for as grown samples to 80-100 nm after rapid thermal annealing, which affects carrier scattering. The ZnO layers deposited on silicon showed lower strain and dislocation density than on sapphire at the same Tg. The calculated half crys

SUBMITTER: Mishra S 

PROVIDER: S-EPMC8307850 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature