On the Contact Optimization of ALD-Based MoS₂ FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance.

ABSTRACT: Despite the extensive ongoing research on MoS₂ field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS₂ interface and their influence on the electrical performance are often overlooked. In addition, the majority of reports on MoS₂ contacts are based on exfoliated MoS₂, whereas synthetic films are even more susceptible to the changes made in device processing conditions. In this paper, working FETs with atomic layer deposition (ALD)-based MoS₂ films and Ti/Au contacts are demonstrated, using current-voltage (I-V) characterization. In pursuit of optimizing the contacts, high-vacuum thermal annealing as well as O₂/Ar plasma cleaning treatments are

SUBMITTER: Mahlouji R 

PROVIDER: S-EPMC8320240 | biostudies-literature | 2021 Jul

REPOSITORIES: biostudies-literature