Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe₂ for In-Memory Computing.

ABSTRACT: Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most of these 2D memristive devices, however, are made from semiconducting chalcogenides which fail to gate the off-state current. To this end, a crossbar device using 2D HfSe₂ is fabricated, and then the top layers are oxidized into "high-k" dielectric HfSe_x O_y via oxygen plasma treatment, so that the cell resistance can be remarkably increased. This two-terminal Ti/HfSe_x O_y /HfSe₂ /Au device exhibits excellent forming-free resistive switching performance with high switching speed (<50 ns), low operation voltage (<3 V), large switching window (10³

SUBMITTER: Liu L 

PROVIDER: S-EPMC8336485 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature