Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers.

ABSTRACT: Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance. Consequently, in the present study, we report on the chemical bonding state of elements and structural characterization of trenches, obtained using SF

SUBMITTER: Pirnaci MD 

PROVIDER: S-EPMC8359159 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature