Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system.

ABSTRACT: Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to investigate the effects of nonideal resistive switching, such as an unstable high-resistance state (HRS), negative set (N-set), and temporal disconnection, during the set process and the conductance saturation feature for synaptic applications. The device shows an I-V curve based on the positive set in the bipolar resistive switching mode. In 1000 endurance tests, we investigated the changes in the HRS, which displays large fluctuations compared with the stable low-resistance state, and the negative effect on the performance of the device resulting from such an instability. The impact of the N-set, which originates from t

SUBMITTER: Park J 

PROVIDER: S-EPMC8367949 | biostudies-literature | 2021 Aug

REPOSITORIES: biostudies-literature