Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials.

ABSTRACT: The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi₂Sr₂CaCu₂O_8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and measurements of electrical resistance as a function of temperature. In this study, we develop one useful method to elucidate the electrical phases in vdW layered materials: indium (In)-contacted vdW tunneling spectroscopy for 1T-TaS₂, Bi-2212 and 2H-MoS₂. We utilized the vdW gap formed at an In/vdW material interface as a tunnel barrier for tunneling spectroscopy. For strongly correlated electron systems such as 1T-TaS₂ and Bi-2212,

SUBMITTER: Choi DH 

PROVIDER: S-EPMC8423830 | biostudies-literature | 2021 Sep

REPOSITORIES: biostudies-literature