Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta₃N₅ photoelectrodes.

ABSTRACT: The (opto)electronic properties of Ta₃N₅ photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role of ammonia annealing following direct reactive magnetron sputtering of tantalum nitride thin films, achieving near-ideal stoichiometry, with significantly reduced native defect and oxygen impurity concentrations. By analyzing structural, optical, and photoelectrochemical properties as a function of ammonia annealing temperature, we provide new insights into the basic semiconductor properties of Ta₃N₅, as well as the role of defects on its optoelectronic cha

SUBMITTER: Eichhorn J 

PROVIDER: S-EPMC8454490 | biostudies-literature | 2021 Sep

REPOSITORIES: biostudies-literature