Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure.

ABSTRACT: Multilevel storage and the continuing scaling down of technology have significantly improved the storage density of phase change memory, but have also brought about a challenge, in that data reliability can degrade due to the resistance drift. To ensure data reliability, many read and write operation technologies have been proposed. However, they only mitigate the influence on data through read and write operations after resistance drift occurs. In this paper, we consider the working principle of multilevel storage for PCM and present a novel 2T2R structure circuit to increase the storage density and reduce the influence of resistance drift fundamentally. To realize 3-bit per cell storage, a wide range of resistances were selected as different states of phase change memory. Then, we propos

SUBMITTER: Lv Y 

PROVIDER: S-EPMC8467895 | biostudies-literature | 2021 Sep

REPOSITORIES: biostudies-literature