HfS₂ thin films deposited at room temperature by an emerging technique, solution atomic layer deposition.

ABSTRACT: As a member of the two-dimensional metal dichalcogenide family, HfS₂ has emerged as a promising material for various optoelectronic applications. Atomic layer deposition is widely used in microelectronics manufacturing with unique properties in terms of accurate thickness control and high conformality. In this work, a simple and versatile method based on the atomic layer deposition principles is presented to generate hafnium disulfide from the solution phase ('solution ALD' or sALD). For ease of comparison with the traditional gaseous atomic layer deposition (gALD) method, the same precursors are used, namely tetrakis-(dimethylamido) hafnium(IV) and H₂S. The deposit is characterized on several different oxide substrates by spectroscopic ellipsometry, scanning electron

SUBMITTER: Cao Y 

PROVIDER: S-EPMC8477444 | biostudies-literature | 2021 Sep

REPOSITORIES: biostudies-literature