Ultrasensitive Photodetection in MoS₂ Avalanche Phototransistors.

ABSTRACT: Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high-gain route toward photodetection in the form of single-photon detectors. Here, the authors report ultrasensitive avalanche phototransistors based on monolayer MoS₂ synthesized by chemical vapor deposition. A lower critical field for the electrical breakdown under illumination shows strong evidence for avalanche breakdown initiated by photogenerated carriers in MoS₂ channel. By utilizing the photo-initiated carrier multiplication, their avalanche photodetectors exhibit the maximum responsivity of ≈3.4 × 10⁷ A W^-1 and the detecti

SUBMITTER: Seo J 

PROVIDER: S-EPMC8498866 | biostudies-literature | 2021 Oct

REPOSITORIES: biostudies-literature