Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content.

ABSTRACT: InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narrowing down the potential range of applications. Here, it is demonstrated that quasi two-dimensional (quasi-2D) QWs with thickness of one atomic monolayer can be deposited with indium contents far exceeding this limit, under certain growth conditions. Multi-QW heterostructures were grown by plasma-assisted molecular beam epitaxy, and their composition and strain were determined with monolayer-scale spatial resolu

SUBMITTER: Vasileiadis IG 

PROVIDER: S-EPMC8523525 | biostudies-literature | 2021 Oct

REPOSITORIES: biostudies-literature