Interface Engineering of TiO₂ Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon.

ABSTRACT: Titanium dioxide (TiO₂) can protect photoelectrochemical (PEC) devices from corrosion, but the fabrication of high-quality TiO₂ coatings providing long-term stability has remained challenging. Here, we compare the influence of Si wafer cleaning and postdeposition annealing temperature on the performance of TiO₂/n⁺-Si photoanodes grown by atomic layer deposition (ALD) using tetrakis(dimethylamido)titanium (TDMAT) and H₂O as precursors at a growth temperature of 100 °C. We show that removal of native Si oxide before ALD does not improve the TiO₂ coating performance under alkaline PEC water splitting conditions if excessive postdeposition annealing is needed to induce crystallization. The as-deposited TiO₂ coatings w

SUBMITTER: Saari J 

PROVIDER: S-EPMC8529674 | biostudies-literature | 2021 Oct

REPOSITORIES: biostudies-literature