Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS₂ Van der Waals Heterostructure.

ABSTRACT: Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping

SUBMITTER: Wen J 

PROVIDER: S-EPMC8564425 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature