Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy.

ABSTRACT: An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO₂ using bisdiethylaminosilane (BDEAS, SiH₂[NEt₂]₂) and O₂ plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100-250 °C, the process demonstrates self-limiting growth with a growth per cycle (GPC) between 0.12 and 0.14 nm and SiO₂ films exhibiting material properties on par with those reported for low-pressure PEALD. Gas-phase infrared spectroscopy on the reactant exhaust gases and optical emission spectroscopy (OES) on the plasma region are used to identify the species that are involved in the ALD process. Based on the identified species, we propose a reacti

SUBMITTER: Mione MA 

PROVIDER: S-EPMC8607820 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature