Sn-Induced Phase Stabilization and Enhanced Thermal Stability of κ-Ga₂O₃ Grown by Mist Chemical Vapor Deposition.

ABSTRACT: Tin (Sn)-doped orthorhombic gallium oxide (κ-Ga₂O₃) films were grown on (0001) sapphire by mist chemical vapor deposition. It is known that κ-Ga₂O₃ is more stable than α-Ga₂O₃ (corundum) but less stable than β-Ga₂O₃ (monoclinic). This thermodynamic stability means an optimal growth temperature (T _g) of the κ-phase (600-650 °C) is also in between the two. At first, it was observed that Sn doping induced the κ-phase during the growth of the β-phase (T _g = 700 °C). Interestingly, Sn could also promote the κ-phase even under the growth condition that strongly favors the α-phase (T _g = 450 °C). The postgrowth annealing tests at 800-1000 °C showed that the

SUBMITTER: Kang HY 

PROVIDER: S-EPMC8613876 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature