MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation.

ABSTRACT: Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resulting from the absence of dangling bonds on the TMDs' surface. Here, we introduce a facile phase-tuning approach for forming a homogenous interface between semiconducting hexagonal (2H) and semi-metallic monoclinic (1T') molybdenum ditelluride (MoTe2). The formation of ohmic contacts increases the charge carrier mobility of MoTe2 field-effect transistor devices to 16.1 cm2 V-1s-1 with high reproducibility, while maintaining a high on/off current ratio by efficiently improving charge injection at the interface. The proposed method enables a simple fabrication process, local patterning, and large-area scaling for the creation of high-performance 2D electronic devices.

SUBMITTER: Bae GY 

PROVIDER: S-EPMC8620056 | biostudies-literature | 2021 Oct

REPOSITORIES: biostudies-literature