Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition.

ABSTRACT: The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al₂O₃ (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity

SUBMITTER: Wu R 

PROVIDER: S-EPMC8620976 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature