Anisotropic point defects in rhenium diselenide monolayers.

ABSTRACT: Point defects in 1T″ anisotropic ReSe₂ offer many possibilities for defect engineering, which could endow this two-dimensional semiconductor with new functionalities, but have so far received limited attention. Here, we systematically investigate a full spectrum of point defects in ReSe₂, including vacancies (V_Se1-4), isoelectronic substitutions (O_Se1-4 and S_Se1-4), and antisite defects (Se_Re1-2 and Re_Se1-4), by atomic-scale electron microscopy imaging and density functional theory (DFT) calculations. Statistical counting reveals a diverse density of various point defects, which are further elaborated by the formation energy calculations. Se vacancy dynamics was unraveled by in-situ electron beam irradiatio

SUBMITTER: Zhu Y 

PROVIDER: S-EPMC8634042 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature