Evolution of the conductive filament system in HfO₂-based memristors observed by direct atomic-scale imaging.

ABSTRACT: The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO₂ has been accepted as one of the most promising resistive switching materials. However, the dynamic changes in the resistive switching process, including the composition and structure of conductive filaments, and especially the evolution of conductive filament surroundings, remain controversial in HfO₂-based memristors. Here, the conductive filament system in the amorphous HfO₂-based memristors with various top electrodes is revealed to be with a quasi-core-shell structure consisting of metallic hexagonal-Hf₆O and its crystalline surroundings (monoclinic or tetragonal HfO_x). The phase of the HfO

SUBMITTER: Zhang Y 

PROVIDER: S-EPMC8668918 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature