A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS₂.

ABSTRACT: Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS₂ was studied. It is found that annealing treatment can make the photoresponsivity and specific detectivity of the CVD-grown 2D MoS₂ based photodetector increase from 0.1722 A W^-1 and 10^14.65 Jones to 0.2907 A W^-1 and 10^14.84 Jones, respectively, while vulcanization can make the rise response time and fall response time decrease from 0.9013 s and 2.173 s to 0.07779 s and 0.08616 s, respectively. A method to determine the O-doping concentration in the CVD-grown 2D MoS₂ has b

SUBMITTER: Jian J 

PROVIDER: S-EPMC8694605 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature