Gate-bias instability of few-layer WSe₂ field effect transistors.

ABSTRACT: Semiconducting two-dimensional (2D) layered materials have shown great potential in next-generation electronics due to their novel electronic properties. However, the performance of field effect transistors (FETs) based on 2D materials is always environment-dependent and unstable under gate bias stress. Here, we report the environment-dependent performance and gate-induced instability of few-layer p-type WSe₂-based FETs. We found that the hole mobility of the transistor drastically reduces in vacuum and further decreases after in situ annealing in vacuum compared with that in air, which can be recovered after exposure to air. The on-current of the WSe₂ FET increases with positive gate bias stress time but decreases with negative gate bias stress time. For the d

SUBMITTER: Wen S 

PROVIDER: S-EPMC8694931 | biostudies-literature | 2021 Feb

REPOSITORIES: biostudies-literature