A visible-light phototransistor based on the heterostructure of ZnO and TiO₂ with trap-assisted photocurrent generation.

ABSTRACT: Visible-light phototransistors have been fabricated based on the heterojunction of zinc oxide (ZnO) and titanium oxide (TiO₂). A thin layer of TiO₂ was deposited onto the spin-coated ZnO film via atomic layer deposition (ALD). The electrical characteristics of the TiO₂ layer were optimized by controlling the purge time of titanium isopropoxide (TTIP). The optimized TiO₂ layer could absorb the visible-light from the sub-gap states near the conduction band of TiO₂, which was confirmed via photoelectron spectroscopy measurements. Therefore, the heterostructure of TiO₂/ZnO can absorb and generate photocurrent under visible light illumination. The oxygen-related-states were investigated via X-ray photoelectro

SUBMITTER: Kim BJ 

PROVIDER: S-EPMC8696453 | biostudies-literature | 2021 Mar

REPOSITORIES: biostudies-literature