Temperature and interlayer coupling induced thermal transport across graphene/2D-SiC van der Waals heterostructure.

ABSTRACT: Graphene based two-dimensional (2D) van der Waals (vdW) materials have attracted enormous attention because of their extraordinary physical properties. In this study, we explore the temperature and interlayer coupling induced thermal transport across the graphene/2D-SiC vdW interface using non-equilibrium molecular dynamics and transient pump probe methods. We find that the in-plane thermal conductivity κ deviates slightly from the 1/T law at high temperatures. A tunable κ is found with the variation of the interlayer coupling strength χ. The interlayer thermal resistance R across graphene/2D-SiC interface reaches 2.71 [Formula: see text] 10^-7 [Formula: see text] at room temperature and χ = 1, and it reduces steadily with the elevation of system temperature and χ, demonstrating

SUBMITTER: Islam MS 

PROVIDER: S-EPMC8760313 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature