Control of the Cu morphology on Ru-passivated and Ru-doped TaN surfaces - promoting growth of 2D conducting copper for CMOS interconnects.

ABSTRACT: Prolonging the lifetime of Cu as a level 1 and level 2 interconnect metal in future nanoelectronic devices is a significant challenge as device dimensions continue to shrink and device structures become more complex. At nanoscale dimensions Cu exhibits high resistivity which prevents its functioning as a conducting wire and prefers to form non-conducting 3D islands. Given that changing from Cu to an alternative metal is challenging, we are investigating new materials that combine properties of diffusion barriers and seed liners to reduce the thickness of this layer and to promote successful electroplating of Cu to facilitate the coating of high-aspect ratio interconnect vias and to allow for optimal electrical conductance. In this study we propose new combined barrier/liner materials based

SUBMITTER: Nies CL 

PROVIDER: S-EPMC8768880 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature