Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress.

ABSTRACT: Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group previously found significant increases in reverse leakage current after applying continuous forward current stress to GaN p-n junctions. In the present study, we identified the type of threading dislocations that provide pathways for this reverse leakage current. GaN p-n diodes were grown by metalorganic vapor phase epitaxy on freestanding GaN(0001) substrates with threading dislocation densities of approximately 3 × 10⁵ cm^-2. These diodes exhibited a breakdown voltage on the order of 200 V and avalanche capability. The leakage current in some diodes in response to a reverse bias was found to rapidly increase with

SUBMITTER: Narita T 

PROVIDER: S-EPMC8795273 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature