GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays.

ABSTRACT: Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing times increase greatly when expanding the exposure area. In order to bring nanowire arrays one step closer to the wafer-scale we take a different approach and replace patterned nanoscale holes with Si nanopillar arrays. The method is compatible with photolithography methods such as phase-shift lithography or deep ultraviolet (DUV) stepper lithography. We provide clear evidence on the advantage of using nanopillars as opposed to nanoscale holes both for the control on the growth mechanisms and for the scalability. We identify the engineerin

SUBMITTER: Guniat L 

PROVIDER: S-EPMC8802830 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature